Giant Temperature Coefficient of Resistivity and Cryogenic Sensitivity in Silicon with Galvanically Displaced Gold Nanoparticles in Freeze-Out Region

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Important Dates

Conference:

Apr. 22-24, 2019

Full Paper Due: Mar. 18, 2019

Abstract Due: Mar. 18, 2019

Audience Registration Due:
Apr. 22, 2019

Presentations of The Spring World Congress on Engineering and Technology (SCET 2017)

● Giant Temperature Coefficient of Resistivity and Cryogenic Sensitivity in Silicon with Galvanically Displaced Gold Nanoparticles in Freeze-Out Region
Author(s)
SeungHoon Lee
Affiliation(s)
Department of Physics, Pukyong National University, Busan 48513, South Korea
KEYWORDS
Giant Temperature Coefficient, Resistivity, Cryogenic Sensitivity, Galvanically Displaced Gold Nanoparticles, Freeze-Out Region
ABSTRACT
The temperature coefficient of resistivity (TCR) and cryogenic sensitivity (Sv) of p-type silicon (p-Si) in the low-temperature region (10–30 K) are remarkably improved by increasing the coverage of galvanically displaced Au nanoparticles (NPs). By increasing the galvanic displacement time from 10 s to 30 s, the average surface roughness (Ra) of the samples increases from 0.31 to 2.31 nm, and the coverage rate of Au NPs increases from 3.1% to 21.9%. In the freeze-out region of the sample, an up to 35% increase of TCR and dramatically improved Sv of p-Si (~ 5785%) are observed with Au coverage of 21.9% compared to p-Si without galvanically displaced Au NPs. By means of a finite element method (FEM) simulation study, it was found that increasing the surface roughness and number of Au NPs on p-Si results in a higher temperature gradient and thermoelectric power to cause the unprecedented TCR and Sv values in the samples.