An AlGaN/GaN High Electron Mobility Transistor (HEMT) with Composite AlGaOx and SiO2 Dielectric Layers

Countdown
0 days

Important Dates

Conference:

Apr. 22-24, 2019

Full Paper Due: Mar. 18, 2019

Abstract Due: Mar. 18, 2019

Audience Registration Due:
Apr. 22, 2019

Presentations of The Spring World Congress on Engineering and Technology (SCET 2017)

● An AlGaN/GaN High Electron Mobility Transistor (HEMT) with Composite AlGaOx and SiO2 Dielectric Layers
Author(s)
Wen-Chau Liu
Affiliation(s)
National Cheng-Kung University, Chinese Taipei
KEYWORDS
AlGaN/GaN High Electron Mobility Transistor (HEMT) , Composite AlGaOx, SiO2 Dielectric Layers
ABSTRACT
An AlGaN/GaN high electron mobility transistor (HEMT) with composit AlGaOx and SiO2 dielectric layers is fabricated. The related transistor properties are studied and reported. The AlGaOx and SiO2 dielectric layers are formed using a proper H2O2 surface treatment and an RF sputtering approach, respectively. The use of these dielectric layers could reduce surface state density and suppress the current collapse effect. Experimentally, the studied HEMT device with a specific AlGaOx/SiO2 stack dielectric structure exhibits excellent performance, including a low gate leakage current of 1.4×10-7 mA/mm, a high maximum transconductance gm,max of 88 mS/mm, a high maximum drain saturation current IDS, max of 405mA/mm, a high drain saturation current operating region IDS,op of 184mA/mm, and a high on/off current ratio R of 4.32×108 for a used gate dimension of 2μm×100μm. Consequentially, the studied AlGaOx/SiO2 stack dielectric structure shows promise for high-performance HEMT device applications.