Room-temperature (RT) Hydrogen Sensing Performance of AlGaN/GaN Heterostructure-based Schottky Diodes

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Important Dates

Conference:

Apr. 22-24, 2019

Full Paper Due: Mar. 18, 2019

Abstract Due: Mar. 18, 2019

Audience Registration Due:
Apr. 22, 2019

Presentations of The Spring World Congress on Engineering and Technology (SCET 2017)

● Room-temperature (RT) Hydrogen Sensing Performance of AlGaN/GaN Heterostructure-based Schottky Diodes
Author(s)
Wen-Chau Liu
Affiliation(s)
National Cheng-Kung University, Chinese Taipei
KEYWORDS
Room-temperature (RT) Hydrogen, AlGaN/GaN Heterostructure-based Schottky Diodes
ABSTRACT
In this work, two different AlGaN/GaN heterostructures are used to produce hydrogen sensing diodes. Good hydrogen sensing properties, including a high sensing response of SR>1×105, a low detection limit (≤1ppm H2/air), and fast sensing speeds at room temperature (RT) are obtained. Moreover, the studied heterostructures can be employed to fabricate high-performance high electron mobility transistors (HEMTs). Therefore, based on the advantages mentioned above and the relatively easy process flow, the studied AlGaN/GaN heterostructures are promising for high-sensitive RT hydrogen sensing applications.